Electrical Test Capability

Below are a selection of our electrical test capabilities, including component product families. We can test components to a variety of temperature and data options. If you don’t see what you require, contact us as we may be able to assist.

Integrated Circuits

ADC – Up to 16-Bit Parallel / Serial
DAC – Up to 16-Bit Parallel / Serial
Multiplexers – 24 I/Os max
Operational Amplifiers & Comparators – Up to 10Mhz
Switches – 24 I/Os max
TTL, CMOS – 24 I/Os max
Voltage Regulators – All

Discrete Components

Diodes – Current Regulator, PiN, Rectifier, Schottky, Zener, TVS
Transistors – BJT, Darlington, JFET, MOSFET, IGBT, Thyristor / SCR, TRIAC

Generic Test Coverage

Current Resolution: Picoamp
Max Frequency: 20MHz
Max Voltage: 614V
Max Current : 50A (Pulsed) 4A (Continuous)

Test temperature for packaged devices: -65°C to 225°C
Full datalog or pass/fail
Optional grading / multiple binning.

Bare Die/ Wafer Semiconductor Testing

After fabrication, semiconductor die can be tested using wafer probe.
Test temperature for bare silicon: 25°C to +125°C

Standard parameter electrical test capabilities by family:

First Blank Space

Bipolar Transistor

Symbol	Parameter	Max test limit	Max reading
V_{(BR)CEO, CES, CER}	Collector-Emitter Breakdown Voltage	I_C = 200mA	614V
V_(BR)CBO	Collector-Base Breakdown Voltage	I_C = 200mA	614V
V_(BR)EBO	Emitter-Base Breakdown Voltage	I_B = 50A	16V
V_CE(sat)	Collector-Emitter saturation voltage	I_B = 50A	16V
		I_C = 50A
V_BE(sat)	Base-Emitter saturation voltage	I_B = 50A	16V
		I_C = 50A
V_BE(on)	Base-Emitter threshold voltage	V_CE = 10V	16V
		I_C = 50A
I_CEO , I_CES	Collector cutoff current	V_CE = 614V	1mA
I_CBO	Collector cutoff current	V_CB = 614V	1mA
I_EBO	Emitter cutoff current	V_BE = 10V	100mA
		V_CE = 10V
h_{FE1 ,}h_FE2	DC current gain factor	V_CE = 10V	2 x 10⁵
		I_C = 50A
		I_B = 50A
h_21e	Short-circuit forward current ratio	V_CE = 10V	2 x 10⁵
		I_C = 1A

Comparator

Symbol	Parameter	Max test limit	Max reading
V_OS, V_IO	Input offset voltage	V_S = ± 51V	200mV
		I_S(max) = 225mA
		V_OUT(OS) = ±32V
V_RGOS	Positive / negative supply current	V_OUT = ± 30V	200mV
I_Q	Quiescent current	V_S = ± 51V	250mA
		I_S(max) = 225mA
		ΔV_IN = 5V
		V_OUT = 30V
I_B,I_IB	Input bias current	V_S = ± 51V	20000nA
		I_S(max) = 225mA
		V_OUT(OS) = ± 30V
I_OS,I_IO	Input offset current	V_S = ± 51V	20000nA
		I_S(max) = 225mA
		V_OUT(OS) = ± 30V
A_VO	Large-signal voltage gain	V_S = ± 51V	130dB
		I_S(max) = 225mA
		V_OUT(OS) = ±32V
		I_L = ± 255mA
SR	Slew rate	V_S = ± 15V	100V/μs
		V_REF = ± 12V
		ΔV_IN = ± 2V
CMMR	Common-mode rejection ratio	V_S = ± 51V	130dB
		I_S(max) = 255mA
		ΔV_IN = ± 51V
PSSR	Power supply rejection ratio	V_S = ± 51V	130dB
		I_S(max) = 255mA
		ΔV_S = ± 50V
V_O	Output voltage swing	V_S = ± 51V	± 51V
		I_S(max) = 255mA
		I_L = 255mA
GBW	Gain-bandwidth product	V_S = ± 51V	200MHz
		Frequency range:
		10 to 100kHz
I_SC	Output short-circuit current	V_S = ± 51V	200mA
		V_IN = ± 5V \| V_OUT = ± 16 V
G_M	Forward transconductance	V_S = ± 51V	7.5 x 10⁵mS
		Δ I_S @ V_S = ± 15V ~ 60 μA

Diode

Symbol	Parameter	Max test limit	Max reading
I_R	Reverse current	V_R = 614V	1mA
V_R	Reverse voltage	I_R = 200mA	614V
V_F	Forward voltage	I_F = 50A	10V
V_Z	Zener voltage	I_Z = 50A	20V

MOSFET / JFET

Symbol	Parameter	Max test limit	Max reading
R_{DS (on)}	Static drain-source on-state resistance	I_DS = 50A	1kΩ
		V_GS = 10V
V_(BR)DSS	Breakdown voltage drain-source	I_DS = 200A	614V
I_DSS	Zero-gate-voltage drain current	V_DS = 614V	1mA
		V_GS = 614V
I_GSSF	Forward gate current	V_GS = 614V	1mA
I_GSSR	Reverse gate current	V_GS = 614V	1mA
V_GS(th)	Gate threshold voltage	I_DS = 50A	10V
V_DS(on)	Drain source voltage	V_GS = 10V	10V
		I_D = 50A
I_D(on)	On-State Drain Current	V_GS = 10V	50A
		V_DS = 10V
g_fs	Forward Transconductance	V_DS = 10V	2000 S
		I_DS = 50A

Digital and Logic

Symbol	Parameter	Max test limit
V_OL	Low-level output voltage	20V
V_OH	High-level output voltage	20V
V_IL	Low-level input voltage	20V
V_IH	High-level input voltage	20V
I_IL	Low-level input current	10mA
I_IH	High-level input current	10mA
I_OL	Low-level output current	10mA
I_OH	High-level output current	10mA
I_OZH, I_OZL, I_OZ	High-impedance-state output current	10mA
I_CCL, I_CCH, I_CC, I_DD	Quiescent current	200mA
I_OS	Short-circuit output current	200mA
V_IK	Input clamp voltage	10V
V_T	Threshold voltage	20V
R_ON	On-state resistance	10kΩ
	Continuity test	2V
	Function test	Pass / Fail
	Hysteresis	20V

Operational Amplifier

Symbol	Parameter	Max test limit	Max reading
V_OS, V_IO	Input offset voltage	V_S = ± 51V	200mV
		I_S(max) = 225mA
		V_OUT(OS) = ±32V
V_RGOS	Positive / negative supply current	V_OUT = ± 30V	200mV
I_Q	Quiescent current	V_S = ± 51V	250mA
		I_S(max) = 225mA
		ΔV_IN = 5V
		V_OUT = 30V
I_B,I_IB	Input bias current	V_S = ± 51V	20000nA
		I_S(max) = 225mA
		V_OUT(OS) = ± 30V
I_OS,I_IO	Input offset current	V_S = ± 51V	20000nA
		I_S(max) = 225mA
		V_OUT(OS) = ± 30V
A_VO	Large-signal voltage gain	V_S = ± 51V	130dB
		I_S(max) = 225mA
		V_OUT(OS) = ±32V
		I_L = ± 255mA
SR	Slew rate	V_S = ± 15V	100V/μs
		V_REF = ± 12V
		ΔV_IN = ± 2V
CMMR	Common-mode rejection ratio	V_S = ± 51V	130dB
		I_S(max) = 255mA
		ΔV_IN = ± 51V
PSSR	Power supply rejection ratio	V_S = ± 51V	130dB
		I_S(max) = 255mA
		ΔV_S = ± 50V
V_O	Output voltage swing	V_S = ± 51V	± 51V
		I_S(max) = 255mA
		I_L = 255mA
GBW	Gain-bandwidth product	V_S = ± 51V	200MHz
		Frequency range:
		10 to 100kHz
I_SC	Output short-circuit current	V_S = ± 51V	200mA
		V_IN = ± 5V \| V_OUT = ± 16 V
G_M	Forward transconductance	V_S = ± 51V	7.5 x 10⁵mS
		Δ I_S @ V_S = ± 15V ~ 60 μA

Transistor

Symbol	Parameter	Max test limit	Max reading
V_{(BR)CEO, CES, CER}	Collector-Emitter Breakdown Voltage	I_C = 200mA	614V
V_(BR)CBO	Collector-Base Breakdown Voltage	I_C = 200mA	614V
V_(BR)EBO	Emitter-Base Breakdown Voltage	I_EB = 50A	10V
V_CE(sat)	Collector-Emitter saturation voltage	I_B = 50A	10V
V_CE(sat)	Collector-Emitter saturation voltage	I_C = 50A	10V
V_BE(sat)	Base-Emitter saturation voltage	I_B = 50A	10V
V_BE(sat)	Base-Emitter saturation voltage	I_C = 50A	10V
V_BE(on)	Base-Emitter threshold voltage	I_BE = 50A	10V
I_CEO , I_CBO, I_CES, I_CER	Collector cutoff current	V_CE = 20V	1mA
I_EBO	Emitter cutoff current	V_EB = 10V	100mA
h_fe	Small-signal DC current gain	V_C = 10V	200V
h_fe	Small-signal DC current gain	f = 1kHz	200V

Voltage Regulator

Symbol	Parameter	Max test limit	Max reading
V_O	Output voltage	V_IN = V_O + 51V	5V
		I_L = 16A
R_LINE	Line regulation	V_IN1 = 56V	1500mV
		V_IN2 = 56V
		I_L = 16A
R_LOAD	Load regulation	V_IN = V_O + 51V	1500mV
		I_L1 = 16A
		I_L2 = 16A
I_Q	Quiescent current	V_IN = V_O + 51V	250mA
		I_L = 3.2 A
PSRR	Power supply ripple rejection	V_IN= V_O + 51V	100dB
		I_L = 295mA
		Fmod = 2KHz
		Vmod = 4V_eff
I_SC	Short circuit current	V_IN = V_O + 51V	3.2A
V_DROP	Dropout voltage	V_IN= V_O + 51V	10V
		I_L = 16A
		ΔV_O = 1000mV
V_res	Reset output voltage	V_IN = V_O + 51V	102V
		I_L = 255mA
I_LEAK	Reset leakage current	V_IN = V_O + 51V	200mA
		I_L = 255mA
V_REVDC	Reverse DC input voltage	I_R = 100mA	60V

Mil-PRF-38534 Class H testing

Mil-PRF-38534 Class K testing

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